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Features

? N-Channel，5V Logic Level Control

? Enhancement mode

? Low on-resistance RDS(on) @ VGS=4.5 V

? Fast Switching

? 100 Avalanche test

? Pb-free lead plating; RoHS compliant

特性

n通道，5V邏輯電平控制增強(qiáng)模式

低導(dǎo)通電阻RDS(on) @ VGS=4.5 V

快速切換

無鉛鍍鉛;通過無鉛認(rèn)證

Features? N-Channel，5V Logic Level Control ? Enhancement mode? Low on-resistance RDS(on) @ VGS=4.5 V? Fast Switching? 100 Avalanche test ? Pb-free lead plating; RoHS compliant

Symbol Parameter Rating UnitV(BR)DSS Drain-Source breakdown voltage 30 VS I Diode continuous forward current TC =25°C45 AD I Continuous drain current @VGS=10V TC =25°C45 ATC =100°C28 ADM I Pulse drain current tested ① TC =25°C180 AEAS Avalanche energy, single pulsed ② 20 mJPD Maximum power dissipation TC =25°C28 WVGS Gate-Source voltage ±20 VTSTG ,TJ Storage and Junction Temperature Range -55 to 150 °CThermal Characteristics Symbol Parameter Typical UnitR?JC Thermal Resistance, Junction-to-Case 4.5 °C/WR?JA Thermal Resistance, Junction-to-Ambient 35 °C/W

Ciss Input Capacitance VDS=15V,VGS=0V, f=1MHz -- 860 -- pFCoss Output Capacitance -- 140 -- pFCrss Reverse Transfer Capacitance -- 105 -- pFRg Gate Resistance f=1MHz -- 2.7 -- ΩQg (10V) Total Gate Charge VDS=15V,ID=20A, VGS=10V -- 19 -- nCQg (4.5V) Total Gate Charge -- 13 -- nCQgs Gate-Source Charge -- 4.3 -- nCQgd Gate-Drain Charge -- 6.5 -- nCSwitching Characteristics d(on) t Turn-on Delay Time VDD=15V, ID=20A, RG=3.0Ω, VGS=10V -- 6-- nsr t Turn-on Rise Time -- 5-- nsd(off) t Turn-Off Delay Time -- 25-- nsf t Turn-Off Fall Time -- 7-- nsSource- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=20A,VGS=0V -- 0.9 1.2 Vrr t Reverse Recovery Time Tj=25℃,Isd=20A, VGS=0V di/dt=500A/μs -- 7 -- nsQrr Reverse Recovery Charge -- 6.3 -- nC